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  semitrans ? 2 trench igbt modules skm195gb066d preliminary data features  
   
  
  
             !!
      "# ! 
  $ % &  typical applications  ' 
   (  )*   
  (  remarks        (     +,-. %/# (   /   ( !  0 1+-2.   (3 ) ! ! 4 5
 6  7  !  8  ( "  
( / gb gal absolute maximum ratings    ,-.#
    ! ( symbol conditions values units igbt    0  ,- . $22  &   0  +9- .    ,- . ,$- '    :2 . ,22 ' & 4; & 4; ,%& 
 <22 '  5 = ,2        >$2 ?  5 1 +- ?   @ $22   0  +-2 . $ a inverse diode & b  0  +9- .    ,- . ,22 '    :2 . +>2 ' & b4; & b4; ,%& b
 <22 ' & b ;    +2  ? 
/  0  +9- . +<22 ' module & 4;  ,22 '  0 8 <2 /// c +9- .   8 <2 /// c +,- .    '# + 
/ <222  characteristics    ,-.#
    ! ( symbol conditions min. typ. max. units igbt  5  5    # &   >#, ' - -#: $#-  &   5  2 #       0  ,- . 2#+> 2#>: '  2  0  ,- . 2#d +   0  +-2 . 2#:- 2#d     5  +-   0  ,-. ,#: <#- e  0  +-2. <#> $ e    & 
  ,22 '#  5  +-   0  ,-.  / +#<- +#d   0  +-2.  / +#9 ,#+    +,#>
b      ,-#  5  2  !  + ;f 2#99
b   2#>9
b g 5  5  8:///c+- +-22
 4 5
  0  . , h  (
 +$2
  4 5
 > e    >22 $:
 
&   ,22' +< i  (!! 4 5!!  > e  0  +-2 . -,2
 !  5  8:jc+- <d
 !! : i 4 08   &5k 2#,, ljm skm 195gb066d 1 04-12-2008 may ? by semikron
semitrans ? 2 trench igbt modules skm195gb066d preliminary data features  
   
  
  
             !!
      "# ! 
  $ % &  typical applications  ' 
   (  )*   
  (  remarks        (     +,-. %/# (   /   ( !  0 1+-2.   (3 ) ! ! 4 5
 6  7  !  8  ( "  
( / gb gal characteristics symbol conditions min. typ. max. units inverse diode  b    & b
  ,22 '?  5  2   0  ,- .  / +#< +#$   b2  0  ,- . 2#d- +   b  0  ,- . ,#> > e & 44; & b  ,22 '  0  +-2 . +22 ' g  (j(  ,222 'ja >2 a    5  8: ?    >22  -#$ i 4 08n   (( 2#< ljm module o  >2
 4 pcp  /#  
8    ,- . 2#9- e    +,- . + e 4 8    (  2#2- ljm ;    
7 ;$ > - q ;    
 ;- ,#- - q  +-2  this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix. this technical information specifies semiconductor devices but promises no characteristics. no warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. skm 195gb066d 2 04-12-2008 may ? by semikron
semitrans ? 2 trench igbt modules skm195gb066d preliminary data features  
   
  
  
             !!
      "# ! 
  $ % &  typical applications  ' 
   (  )*   
  (  remarks        (     +,-. %/# (   /   ( !  0 1+-2.   (3 ) ! ! 4 5
 6  7  !  8  ( "  
( / gb gal z th symbol conditions values units z th(j-c)l 4    + +$2 7jm 4    , <+ 7jm 4    > +$ 7jm 4    < > 7jm     + 2#2,9$     , 2#2<2$     > 2#22+     < 2#22++ z th(j-c)d 4    + ,-2 7jm 4    , ++2 7jm 4    > >- 7jm 4    < - 7jm     + 2#2-<     , 2#2+,     > 2#22+-     < 2#2229 skm 195gb066d 3 04-12-2008 may ? by semikron
fig. 1 typ. output characteristic, inclusive r cc'+ ee' fig. 2 rated current vs. temperature i c = f (t c ) fig. 3 typ. turn-on /-off energy = f (i c ) fig. 4 typ. turn-on /-off energy = f (r g ) fig. 5 typ. transfer characteristic fig. 6 typ. gate charge characteristic skm 195gb066d 4 04-12-2008 may ? by semikron
fig. 7 typ. switching times vs. i c fig. 8 typ. switching times vs. gate resistor r g fig. 9 transient thermal impedance of igbt and diode fig. 10 cal diode forward characteristic fig. 11 typ. cal diode peak reverse recovery current fig. 12 typ. cal diode recovered charge skm 195gb066d 5 04-12-2008 may ? by semikron
ul recognized, file no. e 63 532  n $+ 5k  n $+ 5'o  n $, skm 195gb066d 6 04-12-2008 may ? by semikron


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